Imyuka yihariyebitandukanye na rusangeimyuka yo mu ngandamuburyo bafite imikoreshereze yihariye kandi ikoreshwa mubice byihariye. Bafite ibisabwa byihariye kubisukuye, ibirimo umwanda, ibigize, nibintu byumubiri nubumara. Ugereranije na gaze yinganda, imyuka yihariye iratandukanye muburyo butandukanye ariko ifite umusaruro muto nubunini bwo kugurisha.

Uwitekaimyuka ivanzenaimyuka isanzwedusanzwe dukoresha nibintu byingenzi bigize imyuka yihariye. Imyuka ivanze mubisanzwe igabanyijemo imyuka ivanze muri rusange hamwe na gaze ivanze na elegitoroniki.

Imyuka rusange ivanze harimo:gaze ivanze, ibikoresho byerekana gazi ivanze, gusudira gaze ivanze, kubungabunga gaze ivanze, amashanyarazi avanze gazi, ubushakashatsi bwubuvuzi n’ibinyabuzima bivanze na gaze ivanze, kwanduza no kuvanga gazi ivanze, ibyuma bivangavanga ibikoresho, gaze ivanze n’umuvuduko mwinshi, hamwe n’umwuka wa zeru.

Imvange ya gaze ya elegitoronike irimo ivangwa rya gaze ya epitaxial, imvange ya gaze ya gaze ya chimique, imvange ya gaze ya doping, imvange ya gaze, hamwe nizindi mvange ya gaze ya elegitoroniki. Iyi mvange ya gazi igira uruhare rukomeye mubikorwa bya semiconductor na microelectronics kandi bikoreshwa cyane mubikorwa binini byuzuzanya (LSI) hamwe ninganda nini cyane zuzuzanya (VLSI), ndetse no mubikorwa bya semiconductor.

Ubwoko bwa gaze ivanze ya elegitoronike niyo ikoreshwa cyane

Doping gaze ivanze

Mugukora ibikoresho bya semiconductor hamwe na sisitemu ihuriweho, imyanda imwe nimwe yinjizwa mubikoresho bya semiconductor kugirango itange imiyoboro yifuzwa kandi irwanya, ifasha gukora résistoriste, ihuriro rya PN, ibice byashyinguwe, nibindi bikoresho. Imyuka ikoreshwa mugikorwa cya doping yitwa gaze ya dopant. Iyi myuka irimo cyane cyane arsine, fosifine, fosifore trifluoride, fosifore pentafluoride, arsenic trifluoride, arsenic pentafluoride,boron trifluoride, na diborane. Inkomoko ya dopant isanzwe ivangwa na gaze itwara (nka argon na azote) muri guverenema yinkomoko. Gazi ivanze noneho ikomeza guterwa mumatanura ikwirakwizwa hanyuma ikazenguruka hafi ya wafer, igashyira dopant hejuru ya wafer. Dopant noneho ikora hamwe na silicon kugirango ikore icyuma cya dopant cyimukira muri silicon.

Epitaxial gukura gazi ivanze

Gukura Epitaxial ni inzira yo kubitsa no gukura ikintu kimwe cya kirisiti hejuru yubutaka. Mu nganda za semiconductor, imyuka ikoreshwa mu gukura igice kimwe cyangwa byinshi byibikoresho hakoreshejwe imyuka ya chimique (CVD) kuri substrate yatoranijwe neza yitwa gaze epitaxial. Imyuka isanzwe ya silicon epitaxial irimo dihydrogen dichlorosilane, silicon tetrachloride, na silane. Zikoreshwa cyane cyane mububiko bwa epitaxial silicon, kubika polycrystalline silicon, kubika firime ya silicon oxyde, gushira nitride ya silicon, hamwe na amorphous silicon firime ya selile yizuba nibindi bikoresho bifotora.

Gazi yo gushiramo

Mu gikoresho cya semiconductor hamwe no gukora imiyoboro yumuzunguruko, imyuka ikoreshwa mugikorwa cyo gutera ion hamwe hamwe bita gaze yo gutera ion. Umwanda wa Ionize (nka boron, fosifore, na arsenic ion) byihuta kugera kurwego rwo hejuru mbere yo gushyirwa muri substrate. Ikoranabuhanga rya Ion rikoreshwa cyane mugucunga voltage yumupaka. Ingano yimyanda yatewe irashobora kugenwa mugupima ion beam. Imyuka ya Ion isanzwe irimo fosifore, arsenic, na gaze ya boron.

Gutera gaze ivanze

Kurya ni inzira yo gutobora hejuru yubutaka butunganijwe (nka firime yicyuma, firime ya silicon oxyde, nibindi) kuri substrate idahishwa naba fotora, mugihe uzigama agace kegeranye nabafotora, kugirango ubone ishusho isabwa hejuru yubutaka.

Imiti ivamo imyuka ivanze

Ubumara bwa chimique (CVD) bukoresha ibinyabuzima bihindagurika kugirango ubike ikintu kimwe cyangwa ibivanze binyuze mumyuka ya chimique. Ubu ni uburyo bwo gukora firime ikoresha imyuka ya fonctionnement reaction. Imyuka ya CVD ikoreshwa iratandukanye bitewe n'ubwoko bwa firime ikorwa.